US Patent 11876124 Vertical transistor having an oxygen-blocking layer
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US Patent 11876124 Vertical transistor having an oxygen-blocking layer
Article
Patent abstract
Embodiments of the invention are directed to a semiconductor device that includes a channel fin; a trench adjacent to an upper region of the channel fin; and an oxygen-blocking layer within the trench. The oxygen-blocking layer includes an oxygen gettering material configured to remove oxygen from an environment to which the oxygen-blocking layer is exposed.
Infobox
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Chen Zhang0
Christopher J. Waskiewicz0
Ruilong Xie0
Shahab Siddiqui0
Date of Patent
January 16, 2024
0Patent Application Number
178111290
Date Filed
July 7, 2022
0Patent Citations
Patent Primary Examiner
CPC Code
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