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US Patent 11887855 Methods for depositing fluorine/carbon-free conformal tungsten

Patent 11887855 was granted and assigned to Applied Materials on January, 2024 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Applied Materials

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Current Assignee

Applied Materials

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Xinyu Fu0

David Thompson0

Srinivas Gandikota0

Steve G. Ghanayem0

Avgerinos V. Gelatos0

Mei Chang0

Atif Noori0

Date of Patent

January 30, 2024

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Patent Application Number

172235060

Date Filed

April 6, 2021

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Patent Citations

US Patent 8043432 Atomic layer deposition systems and methods

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US Patent 6875271 Simultaneous cyclical deposition in different processing regions

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US Patent 7674710 Method of integrating metal-containing films into semiconductor devices

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US Patent 7745333 Methods for depositing tungsten layers employing atomic layer deposition techniques

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US Patent 9601339 Methods for depositing fluorine/carbon-free conformal tungsten

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Patent Primary Examiner

Thanhha S. Pham

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CPC Code

0

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Patent abstract

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl

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