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US Patent 9601339 Methods for depositing fluorine/carbon-free conformal tungsten

Patent 9601339 was granted and assigned to Applied Materials on March, 2017 by the United States Patent and Trademark Office.

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Patent abstract

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

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