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US Patent 11889773 Multi-layer phase change memory device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 22, 2023
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Date of Patent
January 30, 2024
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Patent Application Number
18172385
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Patent Citations
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US Patent 7812333 Integrated circuit including resistivity changing material having a planarized surface
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US Patent 7838860 Integrated circuit including vertical diode
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US Patent 8009468 Method for fabricating an integrated circuit including memory element with spatially stable material
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US Patent 8178386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing
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US Patent 8207518 Information recording and reproducing device
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US Patent 8284596 Integrated circuit including an array of diodes coupled to a layer of resistance changing material
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US Patent 8648326 Phase change memory electrode with sheath for reduced programming current
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US Patent 8921802 Mass analyzer apparatus and systems operative for focusing ribbon ion beams and for separating desired ion species from unwanted ion species in ribbon ion beams
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US Patent 8921820 Phase change memory cell with large electrode contact area
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US Patent 9111609 Concentric phase change memory element
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•••
Patent Inventor Names
Injo Ok
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Kevin W. Brew
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Nicole Saulnier
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Timothy Mathew Philip
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Jin Ping Han
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Matthew Joseph BrightSky
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11889773
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Patent Primary Examiner
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Leon Viet Q Nguyen
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CPC Code
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G11C 2213/72
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G11C 13/0004
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G11C 11/54
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