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US Patent 11894101 Sense amplifier, memory and control method

Patent 11894101 was granted and assigned to ChangXin Memory Technologies on February, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
ChangXin Memory Technologies
ChangXin Memory Technologies
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Date Filed
January 10, 2022
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Date of Patent
February 6, 2024
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Patent Applicant
ChangXin Memory Technologies
ChangXin Memory Technologies
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Patent Application Number
17647552
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Patent Citations
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US Patent 8295101 Semiconductor device
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US Patent 8797817 Semiconductor devices, operating methods thereof, and memory systems including the same
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US Patent 8873307 Semiconductor device
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US Patent 9431071 Bit-line sense amplifier capable of compensating mismatch between transistors, and semiconductor memory device including the same
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US Patent 9449680 Write assist circuit and memory cell
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US Patent 10388355 Dual-domain memory
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US Patent 6847568 Sense amplifier configuration for a semiconductor memory device
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US Patent 7394714 Circuit implementation of a dynamic power supply for SRAM core array
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US Patent 7450455 Semiconductor memory device and driving method thereof
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US Patent 7663953 Method for high speed sensing for extra low voltage DRAM
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•••
Patent Inventor Names
Hsin-Cheng Su
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11894101
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Patent Primary Examiner
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Min Huang
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CPC Code
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G11C 7/08
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G11C 7/1096
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G11C 7/12
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