US Patent 11894446 Method of manufacturing a semiconductor device
Patent 11894446 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2024 by the United States Patent and Trademark Office.
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US Patent 11894446 Method of manufacturing a semiconductor device
Article
Patent abstract
In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure is sculpted to have a plurality of non-etched portions and a plurality of etched portions having a narrower width than the plurality of non-etched portions. The sculpted fin structure is oxidized so that a plurality of nanowires are formed in the plurality of non-etched portions, respectively, and the plurality of etched portions are oxidized to form oxides. The plurality of nanowires are released by removing the oxides.
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Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ling-Yen Yeh0
Date of Patent
February 6, 2024
0Patent Application Number
173067250
Date Filed
May 3, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
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