Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
December 27, 2016
Patent Application Number
14960442
Date Filed
December 7, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
A gate-all-around (GAA) nanowire field-effect transistor (FET) device includes a semiconductor substrate, a nanowire on the semiconductor substrate, a gate structure surrounding a central portion of the nanowire, a source/drain region on either side of the gate structure, and at least one dislocation plane in the source/drain region.
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