US Patent 9530841 Gate-all-around nanowire field-effect transistor device
Patent 9530841 was granted and assigned to United Microelectronics Corporation on December, 2016 by the United States Patent and Trademark Office.
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Patent abstract
A gate-all-around (GAA) nanowire field-effect transistor (FET) device includes a semiconductor substrate, a nanowire on the semiconductor substrate, a gate structure surrounding a central portion of the nanowire, a source/drain region on either side of the gate structure, and at least one dislocation plane in the source/drain region.
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US Patent 09530841 Gate-all-around nanowire field-effect transistor device US Patent 9530841 Gate-all-around nanowire field-effect transistor device
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Patent Number
0953084100
Patent Number
953084100
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Patent Jurisdiction
Patent Number
095308410
Date of Patent
December 27, 2016
0Patent Application Number
149604420
Date Filed
December 7, 2015
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Patent Primary Examiner
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Patent Applicant
0
Current Assignee
0
Patent Jurisdiction
Patent Number
095308410
Date of Patent
December 27, 2016
0Patent Application Number
149604420
Date Filed
December 7, 2015
0Official Website
Patent Primary Examiner
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US Patent 09530841 Gate-all-around nanowire field-effect transistor device
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09530841
Date of patent
December 27, 2016
Patent application number
14960442
Date Filed
December 7, 2015
Patent primary examiner
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