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US Patent 11895818 Stacked FET SRAM

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
April 26, 2022
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Date of Patent
February 6, 2024
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Patent Application Number
17660640
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Patent Citations
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US Patent 9911744 Methods and apparatus for SRAM cell structure
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US Patent 10192819 Integrated circuit structure incorporating stacked field effect transistors
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US Patent 10192867 Complementary FETs with wrap around contacts and method of forming same
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US Patent 10707218 Two port SRAM cell using complementary nano-sheet/wire transistor devices
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US Patent 10510622 Vertically stacked complementary-FET device with independent gate control
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US Patent 10756096 Integrated circuit structure with complementary field effect transistor and buried metal interconnect and method
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US Patent 7924604 Stacked memory cell for use in high-density CMOS SRAM
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US Patent 7972920 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
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Patent Inventor Names
Dechao Guo
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Ruilong Xie
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Carl Radens
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Julien Frougier
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Ravikumar Ramachandran
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Junli Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11895818
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Patent Primary Examiner
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Jerome Leboeuf
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CPC Code
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G11C 11/412
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