Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsien-Wei Chen0
Chih-Chia Hu0
Ming-Fa Chen0
Date of Patent
February 20, 2024
0Patent Application Number
171133570
Date Filed
December 7, 2020
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A method includes polishing a semiconductor substrate of a first die to reveal first through-vias that extend into the semiconductor substrate, forming a dielectric layer on the semiconductor substrate, and forming a plurality of bond pads in the dielectric layer. The plurality of bond pads include active bond pads and dummy bond pads. The active bond pads are electrically coupled to the first through-vias. The first die is bonded to a second die, and both of the active bond pads and the dummy bond pads are bonded to corresponding bond pads in the second die.
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