Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kangguo Cheng0
Juntao Li0
Chen Zhang0
Zhenxing Bi0
Date of Patent
February 20, 2024
0Patent Application Number
173468060
Date Filed
June 14, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
A method for manufacturing a semiconductor device includes forming a first vertical transistor on a semiconductor substrate, and forming a second vertical transistor stacked on the first vertical transistor. In the method, an isolation layer is formed between the first and second vertical transistors. The isolation layer includes a rare earth oxide.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.