Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sheng-Chih Lai0
Date of Patent
February 20, 2024
0Patent Application Number
178138020
Date Filed
July 20, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
A method includes forming a bottom electrode, forming a dielectric layer, forming a Phase-Change Random Access Memory (PCRAM) region in contact with the dielectric layer, and forming a top electrode. The dielectric layer and the PCRAM region are between the bottom electrode and the top electrode. A filament is formed in the dielectric layer. The filament is in contact with the dielectric layer.
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