Patent 11910733 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2024 by the United States Patent and Trademark Office.
A method includes forming a bottom electrode, forming a dielectric layer, forming a Phase-Change Random Access Memory (PCRAM) region in contact with the dielectric layer, and forming a top electrode. The dielectric layer and the PCRAM region are between the bottom electrode and the top electrode. A filament is formed in the dielectric layer. The filament is in contact with the dielectric layer.