Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Hua Yu0
Tsz-Mei Kwok0
Kun-Mu Li0
Yi-Jing Lee0
Date of Patent
February 27, 2024
0Patent Application Number
176788560
Date Filed
February 23, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
A device includes first and second semiconductor fins, first, second, third and fourth fin sidewall spacers, and first and second epitaxy structures. The first and second fin sidewall spacers are respectively on opposite sides of the first semiconductor fin. The third and fourth fin sidewall spacers are respectively on opposite sides of the second semiconductor fin. The first and third fin sidewall spacers are between the first and second semiconductor fins and have smaller heights than the second and fourth fin sidewall spacers. The first and second epitaxy structures are respectively on the first and second semiconductor fins and merged together.
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