US Patent 8264021 Finfets and methods for forming the same

Patent 8264021 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2012 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

82640210

Patent Inventor Names

Li-Shyue Lai0

Chih Chieh Yeh0

Clement Hsingjen Wann0

Tsz-Mei Kwok0

Date of Patent

September 11, 2012

Patent Application Number

127616860

Date Filed

April 16, 2010

Patent Citations Received

‌

US Patent 12075607 Semiconductor device

‌

US Patent 11916071 Semiconductor device having epitaxy source/drain regions

Patent Primary Examiner

‌

Victor A. Mandala, Jr.

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