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US Patent 11921427 Methods for making hard masks useful in next-generation lithography

Patent 11921427 was granted and assigned to Lam Research on March, 2024 by the United States Patent and Trademark Office.

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Patent abstract

Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.

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