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US Patent 11922987 Storage device, electronic component, and electronic device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
December 14, 2022
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Date of Patent
March 5, 2024
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Patent Application Number
18081109
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Patent Citations
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US Patent 8045360 Semiconductor device having single-ended sensing amplifier
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US Patent 8780664 Semiconductor memory device with sense amplifier and bitline isolation
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US Patent 8829580 Magnetoresistive memory and manufacturing method
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US Patent 8964478 Semiconductor device
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US Patent 9103724 Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
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US Patent 9378781 System, apparatus, and method for sense amplifiers
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US Patent 9542977 Semiconductor device and electronic device
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US Patent 9607991 Semiconductor device
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US Patent 9627034 Electronic device
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US Patent 9640256 Nonvolatile static random access memory (NVSRAM) system having a static random access memory (SRAM) array and a resistive memory array
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•••
Patent Inventor Names
Hideki Uochi
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Yoshiaki Oikawa
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Atsushi Miyaguchi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11922987
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Patent Primary Examiner
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Michael T. Tran
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CPC Code
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H01L 27/1225
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H01L 29/78648
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H01L 29/78696
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H01L 21/8239
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H01L 27/105
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H01L 29/82
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H01L 43/08
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G11C 11/161
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G11C 11/1655
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G11C 11/1673
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