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US Patent 11922987 Storage device, electronic component, and electronic device

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 US Patent 11922987 Storage device, electronic component, and electronic device

Article

Patent abstract

A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
119229870
Patent Inventor Names
Atsushi Miyaguchi0
Hideki Uochi0
Yoshiaki Oikawa0
Date of Patent
March 5, 2024
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Patent Application Number
180811090
Date Filed
December 14, 2022
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Patent Citations
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US Patent 7205598 Random access memory device utilizing a vertically oriented select transistor
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US Patent 7245522 Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
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US Patent 7548450 Magnetic memory device, method for writing magnetic memory device and method for reading magnetic memory device
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US Patent 7660184 Semiconductor memory for disconnecting a bit line from a sense amplifier in a standby period and memory system including the semiconductor memory
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US Patent 7674650 Semiconductor device and manufacturing method thereof
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US Patent 7692986 Semiconductor memory device for precharging bit lines except for specific reading and writing periods
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US Patent 7760567 Semiconductor memory and system
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US Patent 7791941 Non-volatile SRAM cell
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US Patent 8045360 Semiconductor device having single-ended sensing amplifier
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US Patent 8116112 Semiconductor memory device
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US Patent 8199550 Magnetic memory device
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US Patent 8310887 Semiconductor device having single-ended sensing amplifier
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US Patent 8391041 Magnetic memory device
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US Patent 8462573 Semiconductor memory device with sense amplifier and bitline isolation
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US Patent 8472273 Semiconductor device
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US Patent 8780664 Semiconductor memory device with sense amplifier and bitline isolation
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US Patent 8829580 Magnetoresistive memory and manufacturing method
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US Patent 8964478 Semiconductor device
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US Patent 9103724 Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
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US Patent 9378781 System, apparatus, and method for sense amplifiers
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US Patent 9542977 Semiconductor device and electronic device
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US Patent 9607991 Semiconductor device
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US Patent 9627034 Electronic device
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US Patent 9640256 Nonvolatile static random access memory (NVSRAM) system having a static random access memory (SRAM) array and a resistive memory array
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US Patent 9704562 Semiconductor device with stacked structure of memory cells over sensing amplifiers, circuit board, and electronic device
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US Patent 9728259 Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin
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US Patent 9734880 Apparatuses, methods, and systems for stochastic memory circuits using magnetic tunnel junctions
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US Patent 9848149 Method for driving photosensor, method for driving semiconductor device, semiconductor device, and electronic device
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US Patent 9869716 Device comprising programmable logic element
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US Patent 9870811 Physically unclonable function based on comparison of MTJ resistances
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US Patent 10019025 Semiconductor device and electronic device
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US Patent 10032492 Semiconductor device, driver IC, computer and electronic device
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US Patent 10055232 Semiconductor device comprising memory circuit
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US Patent 10102895 Back gate biasing magneto-resistive random access memory (MRAM) bit cells to reduce or avoid write operation failures caused by source degeneration
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US Patent 10192871 Semiconductor device
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US Patent 10236884 Word line driver comprising NAND circuit
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US Patent 10304523 Semiconductor device comprising memory devices each comprising sense amplifier and memory cell
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Patent Primary Examiner
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Michael T. Tran
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CPC Code
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H01L 29/82
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H01L 29/78696
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H01L 29/7869
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H01L 29/78648
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G11C 11/419
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H01L 27/228
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H01L 27/1225
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H01L 27/105
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H01L 21/8239
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H01L 43/08
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H01L 43/02
0
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G11C 11/1675
0
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G11C 11/1673
0
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G11C 11/1659
0
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G11C 11/1655
0
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G11C 11/161
0

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