Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hyungsuk Alexander Yoon0
Zhongwei Zhu0
Date of Patent
March 5, 2024
0Patent Application Number
170422830
Date Filed
March 26, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a capping layer on the HfO2 layer, annealing the HfO2 layer and the capping layer to form ferroelectric hafnium HfO2, and selectively etching the capping layer to remove the capping layer without removing the HfO2 layer.
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