Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kie Y. Ahn0
Leonard Forbes0
Date of Patent
May 4, 2010
Patent Application Number
11355490
Date Filed
February 16, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
Electronic apparatus and methods of forming the electronic apparatus include a HfSiON film on a substrate for use in a variety of electronic systems. The HfSiON film may be structured as one or more monolayers. The HfSiON film may be formed by atomic layer deposition. Electrodes to a dielectric containing a HfSiON may be structured as one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum. The titanium nitride and the tantalum may be formed by atomic layer deposition.
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