US Patent 11923242 Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes: stacking a thermally-decomposable organic material on a surface of a substrate in which a recess is formed; implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material; and heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer and to desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess.