US Patent 11923242 Method of manufacturing semiconductor device
Patent 11923242 was granted and assigned to Tokyo Electron on March, 2024 by the United States Patent and Trademark Office.
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US Patent 11923242 Method of manufacturing semiconductor device
Article
Patent abstract
A method of manufacturing a semiconductor device, includes: stacking a thermally-decomposable organic material on a surface of a substrate in which a recess is formed; implanting ions into a surface of the organic material stacked in the recess so as to modify the surface of the organic material and form a modified layer on the surface of the organic material; and heating the substrate to a first temperature so as to thermally decompose the organic material under the modified layer and to desorb the organic material through the modified layer so that an air gap is formed between the modified layer and the recess.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Syuji Nozawa0
Tatsuya Yamaguchi0
Date of Patent
March 5, 2024
0Patent Application Number
172254500
Date Filed
April 8, 2021
0Patent Citations
Patent Primary Examiner
CPC Code
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