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US Patent 11923253 Integrated circuit structure
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Patent
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Date Filed
February 10, 2023
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Date of Patent
March 5, 2024
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Patent Application Number
18167442
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Patent Citations
US Patent 9721804 Semiconductor device and method for fabricating the same
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US Patent 9412616 Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products
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US Patent 9735060 Hybrid fin cut etching processes for products comprising tapered and non-tapered FinFET semiconductor devices
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US Patent 8609510 Replacement metal gate diffusion break formation
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US Patent 8753970 Methods of forming semiconductor devices with self-aligned contacts and the resulting devices
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Patent Inventor Names
Cheng-Han Wu
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Rei-Jay Hsieh
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Kuei-Ming Chang
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Chie-luan Lin
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11923253
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Patent Primary Examiner
Sitaramarao S Yechuri
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CPC Code
H01L 27/0924
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H01L 29/0653
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H01L 29/0847
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H01L 29/66545
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H01L 29/7848
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H01L 21/823821
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H01L 21/823814
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H01L 21/823481
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H01L 21/76232
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H01L 21/823878
0
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