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US Patent 11923279 Semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 7, 2022
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Date of Patent
March 5, 2024
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Patent Application Number
18076861
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Patent Citations
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US Patent 10236238 Semiconductor device
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US Patent 9443836 Forming pixel units of image sensors through bonding two chips
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US Patent 9799587 Semiconductor device
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US Patent 6841883 Multi-dice chip scale semiconductor components and wafer level methods of fabrication
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US Patent 6962835 Method for room temperature metal direct bonding
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US Patent 7052941 Method for making a three-dimensional integrated circuit structure
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US Patent 7358578 Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring
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US Patent 8044946 Semiconductor device
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US Patent 8148728 Method for fabrication of a semiconductor device and structure
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US Patent 8629524 Apparatus for vertically integrated backside illuminated image sensors
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•••
Patent Inventor Names
Nobutoshi Fujii
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Yoshihisa Kagawa
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11923279
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Patent Primary Examiner
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Jasmine J Clark
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CPC Code
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H01L 23/53238
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H01L 24/05
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H01L 24/08
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H01L 24/09
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H01L 25/0657
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H01L 23/49866
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H01L 27/14634
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H01L 27/14636
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H01L 27/1464
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H01L 23/498
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