Patent attributes
A semiconductor device includes a first substrate, a logical circuit, a first insulating film, a wiring, a plug, and a first layer containing a metal oxide or a metal nitride. The logical circuit is disposed on the first substrate. The first insulating film is disposed above the logical circuit. The wiring includes a first film disposed in the first insulating film, the first film extending in a first direction along an upper surface of the first substrate, and the first film containing a metal, and a first metal layer disposed in the first insulating film via the first film. The plug is disposed under the wiring, extends in a second direction that intersects the first direction, and is electrically connected to the wiring. The first layer is provided between an upper end of the plug and a bottom end of the wiring.
