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US Patent 11923417 Lateral bipolar junction transistors with a back-gate

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 11, 2022
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Date of Patent
March 5, 2024
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Patent Application Number
17692517
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Patent Citations
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US Patent 8420493 SOI SiGe-base lateral bipolar junction transistor
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US Patent 9536788 Complementary SOI lateral bipolar transistors with backplate bias
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US Patent 8586441 Germanium lateral bipolar junction transistor
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US Patent 10825921 Lateral bipolar junction transistor with controlled junction
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US Patent 6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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Patent Inventor Names
Hong Yu
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Shesh Mani Pandey
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11923417
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Patent Primary Examiner
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Mark W Tornow
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CPC Code
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H01L 29/66242
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H01L 29/66265
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H01L 29/737
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H01L 29/0808
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H01L 29/0821
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H01L 29/7317
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H01L 21/8222
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H01L 27/082
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H01L 29/0692
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H01L 29/735
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