US Patent 11923462 Lateral Schottky diode

Various aspects of Schottky diodes are described. The diodes are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter in some cases among other aspects. In one example, a Schottky diode includes a conduction layer, a first layer over the conduction layer, a second layer over the first layer, a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, and an anode over the second layer between the first cathode and the second cathode. The first cathode and the second cathode can be electrically connected to each other as a cathode of the Schottky diode.