Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Rasit O. Topaloglu0
Sami Rosenblatt0
Date of Patent
March 12, 2024
0Patent Application Number
178595780
Date Filed
July 7, 2022
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A semiconductor structure includes fins that have a 2D material, such as Graphene, upon at least the fin sidewalls. The thickness of the 2D material sidewall may be tuned to achieve desired finFET band gap control. Neighboring fins of the semiconductor structure form fin wells. The semiconductor structure may include a fin cap upon each fin and the 2D material is formed upon the sidewalls of the fin and the bottom surface of the fin wells. The semiconductor structure may include a well-plug at the bottom of the fin wells and the 2D material is formed upon the sidewalls and upper surface of the fins. The semiconductor structure may include both fin caps and well-plugs such that the 2D material is formed upon the sidewalls of the fins.
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