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US Patent 11929327 Liner-free conductive structures with anchor points

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 22, 2020
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Date of Patent
March 12, 2024
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Patent Application Number
16936335
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Patent Citations
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9287138 FinFET low resistivity contact formation method
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9520482 Method of cutting metal gate
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US Patent 9543248 Integrated circuit devices and methods
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US Patent 9548366 Self aligned contact scheme
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9831183 Contact structure and method of forming
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•••
Patent Inventor Names
Keng-Chu Lin
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Hsu-Kai Chang
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Sung-Li Wang
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Shuen-Shin Liang
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Chia-Hung Chu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11929327
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Patent Primary Examiner
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Phat X Cao
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CPC Code
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H01L 21/76834
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H01L 21/76888
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H01L 21/76805
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H01L 21/76844
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H01L 21/76883
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H01L 23/53257
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H01L 23/5226
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H01L 23/53242
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