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US Patent 11935928 Bipolar transistor with self-aligned asymmetric spacer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 18, 2022
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Date of Patent
March 19, 2024
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Patent Application Number
17747476
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Patent Citations
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8420493 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8586441 Germanium lateral bipolar junction transistor
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US Patent 10014397 Bipolar junction transistors with a combined vertical-lateral architecture
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US Patent 9105680 Insulated gate bipolar transistor
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US Patent 10825921 Lateral bipolar junction transistor with controlled junction
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US Patent 6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
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US Patent 7776700 LDMOS device and method
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Patent Inventor Names
Hong Yu
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Vibhor Jain
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Jianwei Peng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11935928
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Patent Primary Examiner
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Syed I Gheyas
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CPC Code
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H01L 29/735
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H01L 29/6625
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H01L 29/66242
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