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US Patent 11935932 Semiconductor device and method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 21, 2022
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Date of Patent
March 19, 2024
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17870170
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Patent Citations
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548366 Self aligned contact scheme
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608065 Air gap spacer for metal gates
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US Patent 9716158 Air gap spacer between contact and gate region
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US Patent 9831183 Contact structure and method of forming
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US Patent 9859386 Self aligned contact scheme
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US Patent 10121675 Semiconductor device and a method for fabricating the same
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•••
Patent Inventor Names
Chen-Ming Lee
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Mei-Yun Wang
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Fu-Kai Yang
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Chun-Han Chen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11935932
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Patent Primary Examiner
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Bac H Au
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CPC Code
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H01L 29/515
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H01L 29/4991
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