US Patent 11942473 Electrostatic discharge protection for high speed transceiver interface

Electrostatic discharge protection for high speed transceiver interface is disclosed. In one aspect, an electrical overstress (EOS) protection device includes an anode terminal and a cathode terminal, a silicon controlled rectifier, a second NPN bipolar transistor including a base connected to the anode terminal and an emitter connected to an emitter of the first PNP bipolar transistor, and a second PNP bipolar transistor including an emitter connected to an emitter of the second NPN bipolar transistor and a base connected to a base of the first PNP bipolar transistor. Two or more paths for current conduction are present during a positive overstress transient that increases a voltage of the anode terminal relative to the cathode terminal, including a first path through the silicon controlled rectifier and a second path through the second NPN bipolar transistor and the second PNP bipolar transistor.