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US Patent 11942534 Bipolar transistor with thermal conductor

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 16, 2022
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Date of Patent
March 26, 2024
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Patent Application Number
17745178
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Patent Citations
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8420493 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8586441 Germanium lateral bipolar junction transistor
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US Patent 8860092 Metallic sub-collector for HBT and BJT transistors
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US Patent 9502504 SOI lateral bipolar transistors having surrounding extrinsic base portions
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US Patent 10319830 Heterojunction bipolar transistor power amplifier with backside thermal heatsink
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US Patent 9530711 Silicon-on-insulator heat sink
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US Patent 10825921 Lateral bipolar junction transistor with controlled junction
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US Patent 6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS
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US Patent 7528012 Method for forming heat sinks on silicon on insulator wafers
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Patent Inventor Names
Judson R. Holt
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Vibhor Jain
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Hong Yu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11942534
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Patent Primary Examiner
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Syed I Gheyas
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CPC Code
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H01L 29/7371
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H01L 23/3738
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H01L 29/735
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H01L 29/66242
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H01L 29/6625
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H01L 29/737
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