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US Patent 11944017 Semiconductor structure and manufacturing method of the same

Patent 11944017 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2024 by the United States Patent and Trademark Office.

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Patent abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

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