US Patent 11944017 Semiconductor structure and manufacturing method of the same
Patent 11944017 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2024 by the United States Patent and Trademark Office.
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US Patent 11944017 Semiconductor structure and manufacturing method of the same
Article
Patent abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chen-Jung Wang0
Chien Chung Huang0
Han-Ting Lin0
Jyu-Horng Shieh0
Qiang Fu0
Sin-Yi Yang0
Tai-Yen Peng0
Yu-Shu Chen0
Date of Patent
March 26, 2024
0Patent Application Number
183127230
Date Filed
May 5, 2023
0Patent Citations
Patent Primary Examiner
CPC Code
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