US Patent 11955526 Thick gate oxide device option for nanosheet device

An apparatus comprising a substrate and a thin gate oxide nanosheet device located on the substrate, having a first plurality of nanosheet layers, wherein each of the first plurality of nanosheet layers has a first thickness located at the center of the nanosheet. A thick gate oxide nanosheet device located on the substrate, having a second plurality of nanosheet layers, wherein each of the second plurality of nanosheet layers has a second thickness and wherein the first thickness is less than the second thickness.