Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chun Hsiung Tsai0
Clement Hsingjen Wann0
Ru-Shang Hsiao0
Date of Patent
April 16, 2024
0Patent Application Number
175826480
Date Filed
January 24, 2022
0Patent Citations
0
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Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor structure includes a substrate, a conductive feature over the substrate, a dielectric layer over the conductive feature and the substrate, and a structure disposed over and electrically connected to the conductive feature. The structure is partially surrounded by the dielectric layer and includes a first metal-containing layer and a second metal-contain layer surrounded by the first metal-containing layer. The first and the second metal-containing layers include different materials. A lower portion of the first metal-containing layer includes a transition metal or a transition metal nitride and an upper portion of the first metal-containing layer includes a transition metal fluoride or a transition metal chloride.
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