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US Patent 11978719 Metal-dielectric bonding method and structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 9, 2022
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Date of Patent
May 7, 2024
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Patent Application Number
17941461
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Patent Citations
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US Patent 10886252 Method of bonding semiconductor substrates
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US Patent 10910782 Treatment, before the bonding of a mixed Cu-oxide surface, by a plasma containing nitrogen and hydrogen
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US Patent 6962835 Method for room temperature metal direct bonding
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US Patent 7078811 Semiconductor device and method for fabricating the device
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US Patent 7453150 Three-dimensional face-to-face integration assembly
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US Patent 7842540 Room temperature metal direct bonding
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US Patent 8278186 Wafer cleaning method and wafer bonding method using the same
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US Patent 9048283 Hybrid bonding systems and methods for semiconductor wafers
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US Patent 9520361 Semiconductor devices
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US Patent 9748198 Hybrid bonding systems and methods for semiconductor wafers
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•••
Patent Inventor Names
Siping Hu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11978719
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Patent Primary Examiner
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David A Zarneke
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CPC Code
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H01L 2224/80894
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H01L 2224/0812
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H01L 24/63
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H01L 33/0093
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H01L 2224/08135
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H01L 24/65
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