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US Patent 11984497 Integration of a Schottky diode with a MOSFET

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
January 17, 2023
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Date of Patent
May 14, 2024
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Patent Application Number
18155394
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Patent Citations
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US Patent 6979863 Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
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US Patent 7851881 Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode
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US Patent 8384182 Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making
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US Patent 8633560 Semiconductor device
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US Patent 8704295 Schottky and MOSFET+Schottky structures, devices, and methods
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US Patent 9577046 Semiconductor device
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US Patent 9385244 Wide bandgap semiconductor device
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US Patent 11581431 Integration of a Schottky diode with a MOSFET
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US Patent 6897133 Method for producing a schottky diode in silicon carbide
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US Patent 6936850 Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material
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Patent Inventor Names
Hossein Elahipanah
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Nicolas Thierry-Jebali
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Sergey Reshanov
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Adolf Schoner
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11984497
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Patent Primary Examiner
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Joseph C. Nicely
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CPC Code
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H01L 27/0727
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H01L 29/47
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H01L 29/0623
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H01L 29/7803
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H01L 29/7806
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H01L 29/1095
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