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US Patent 12002708 Method for forming intermetallic air gap

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 4, 2019
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Date of Patent
June 4, 2024
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Patent Application Number
17613491
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Patent Citations
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US Patent 9368572 Vertical transistor with air-gap spacer
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US Patent 10374254 Composite electrolytes
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US Patent 10429342 Chemically-sensitive field effect transistor
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US Patent 8344241 Nanostructure and photovoltaic cell implementing same
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US Patent 8624108 Photovoltaic cells based on nano or micro-scale structures
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Patent Inventor Names
Xiaolan Zhong
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Xiaoxu Kang
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Ruoxi Shen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12002708
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Patent Primary Examiner
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Mouloucoulaye Inoussa
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CPC Code
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H01L 21/823885
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H01L 29/6653
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H01L 21/823487
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H01L 23/485
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H01L 29/6656
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H01L 21/823481
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H01L 21/31116
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H01L 21/283
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H01L 21/288
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H01L 21/32051
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