Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 14, 2016
Patent Application Number
14948257
Date Filed
November 21, 2015
Patent Citations Received
0
Patent Primary Examiner
Patent abstract
A vertical transistor has a first air-gap spacer between the gate and the bottom source/drain, and a second air-gap spacer between the gate and the contact to the bottom source/drain. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
