US Patent 12004435 Tunable resistive random access memory cell

A method of manufacturing an RRAM cell includes forming a first wire, forming an insulator on the first wire, the insulator having a pore and an insulator surface, and forming a first electrode layer on the first wire and the insulator, the first electrode having an electrode surface. The method further includes recessing the first electrode layer such that the electrode surface is recessed toward the first wire from the insulator surface, forming a switching layer on the insulator and the first electrode, and forming a second electrode on the switching layer.