Patent attributes
A resistive memory cell, e.g., a CBRAM or ReRAM cell, may include a top electrode, a bottom electrode having an elongated trench shape defining a pair of spaced-apart bottom electrode sidewalls, and an electrolyte switching region arranged between the top electrode and at least one of the bottom electrode sidewalls to provide a path for the formation of a conductive filament or vacancy chain from the at least one bottom electrode sidewall to the top electrode when a voltage bias is applied to the cell. In addition, a memory may include an array of resistive memory cells including a top electrode structure, a plurality of trench-style bottom electrodes extending in first direction, and a plurality of inverted-trench-style electrolyte switching regions extending perpendicular to the trench-style bottom electrodes to define a two-dimensional array of spaced-apart contact areas between the electrolyte switching regions and the bottom electrodes.
