US Patent 12009200 Treatment for adhesion improvement
Patent 12009200 was granted and assigned to Taiwan Semiconductor Manufacturing Company on June, 2024 by the United States Patent and Trademark Office.
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US Patent 12009200 Treatment for adhesion improvement
A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.
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