US Patent 12009210 Method of manufacturing a semiconductor device
Patent 12009210 was granted and assigned to Taiwan Semiconductor Manufacturing Company on June, 2024 by the United States Patent and Trademark Office.
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US Patent 12009210 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.
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