Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Weng Chang0
Chi On Chui0
Hsin-Yi Lee0
Date of Patent
June 11, 2024
0Patent Application Number
173410340
Date Filed
June 7, 2021
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A semiconductor device includes: a fin protruding above a substrate; source/drain regions over the fin; nanosheets between the source/drain regions; and a gate structure over the fin and between the source/drain regions, the gate structure including: a gate dielectric material around each of the nanosheets; a work function material around the gate dielectric material; a liner material around the work function material, where the liner material has a non-uniform thickness and is thicker at a first location between the nanosheets than at a second location along sidewalls of the nanosheets; and a gate electrode material around at least portions of the liner material.
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