US Patent 12009406 FinFET device and method
Patent 12009406 was granted and assigned to Taiwan Semiconductor Manufacturing Company on June, 2024 by the United States Patent and Trademark Office.
All edits
Edits on 12 Jun, 2024
Golden AI
Edits made to:
Infobox (+21 properties)
Article (+419 characters)
US Patent 12009406 FinFET device and method
Article
Patent abstract
A semiconductor device includes a fin extending from a substrate, a gate stack over and along a sidewall of the fin, a spacer along a first sidewall of the gate stack and the sidewall of the fin, a dummy gate material along the sidewall of the fin, wherein the dummy gate material is between the spacer and the gate stack, and a first epitaxial source/drain region in the fin and adjacent the gate stack.
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chao-Cheng Chen0
Chih-Han Lin0
Ming-Ching Chang0
Date of Patent
June 11, 2024
0Patent Application Number
173451880
Date Filed
June 11, 2021
0Patent Citations
Patent Primary Examiner
Find more entities like US Patent 12009406 FinFET device and method
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
