US Patent 12015001 Bonding structure and method thereof

A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.