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US Patent 12020981 Conductive feature formation and structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 26, 2023
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Date of Patent
June 25, 2024
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Patent Application Number
18359036
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Patent Citations
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US Patent 7348676 Semiconductor device having a metal wiring structure
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US Patent 9287330 Light emitting device and method of manufacturing the same
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US Patent 9343356 Back end of the line (BEOL) interconnect scheme
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548366 Self aligned contact scheme
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9659813 Interconnection and manufacturing method thereof
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US Patent 9721889 Middle of the line (MOL) metal contacts
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•••
Patent Inventor Names
Shian Wei Mao
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Wei-Jung Lin
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Ming-Hsing Tsai
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Yu Shih Wang
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Ken-Yu Chang
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Chun-I Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12020981
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Patent Primary Examiner
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Nitin Parekh
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CPC Code
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H01L 23/53266
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H01L 23/53252
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H01L 21/32134
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H01L 21/76847
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H01L 21/76846
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