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US Patent 12020992 Methods and apparatus for processing a substrate

Patent 12020992 was granted and assigned to Applied Materials on June, 2024 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Current Assignee
Applied Materials
Applied Materials
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
120209920
Patent Inventor Names
Muhammad Avicenna Naradipa0
Prayudi Lianto0
Andrivo Rusydi0
Arvind Sundarrajan0
Guan Huei See0
Date of Patent
June 25, 2024
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Patent Application Number
175846690
Date Filed
January 26, 2022
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Patent Citations
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US Patent 7561282 Techniques for determining overlay and critical dimension using a single metrology tool
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US Patent 7585686 Method and apparatus for processing a wafer
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US Patent 7759254 Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
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US Patent 7985188 Vessel, coating, inspection and processing apparatus
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US Patent 10201660 Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like
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US Patent 9572526 Apparatus and method for transporting a vessel to and from a PECVD processing station
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US Patent 10312217 Method for low temperature bonding and bonded structure
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US Patent 6872428 Apparatus and method for large area chemical vapor deposition using multiple expanding thermal plasma generators
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Patent Primary Examiner
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Mohamed K Amara
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CPC Code
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H01L 2224/80895
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G01N 13/00
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H01L 22/12
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H01L 24/80
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H01L 2224/80896
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Patent abstract

Methods and apparatus for processing a first substrate and a second substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate, which is different than the first substrate, determining in-situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate, measuring a change of phase and amplitude in determined in-situ ESE data, and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from the measured change of phase and amplitude in the in-situ ESE data.

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